TYP | BESCHREIBUNG |
---|---|
Kategorie | FETs, MOSFETs |
Herst. | EPC |
Serie | - |
Produktstatus | Not For New Designs |
Verpackung | Gurt auf Rolle (Tape and Reel - TR) |
Gehäuse / Hülle | Die |
Montagetyp | Oberflächenmontage |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Technology | GaNFET (Gallium Nitride) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
Rds On (Max) @ Id, Vgs | 3.2mOhm @ 25A, 5V |
FET Feature | - |
Power Dissipation (Max) | - |
Vgs(th) (Max) @ Id | 2.5V @ 7mA |
Lieferantengerätepaket | Die |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs (Max) | +6V, -4V |
Drain to Source Voltage (Vdss) | 100 V |
Gate Charge (Qg) (Max) @ Vgs | 16.3 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds | 2703 pF @ 50 V |
EIGENSCHAFT | BESCHREIBUNG |
---|---|
RoHS-Status | ROHS3 Compliant |
Feuchteempfindlichkeit (MSL) | 1 (Unlimited) |
REACH-Status | Reach unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0040 |
MENGE | STÜCKPREIS | GESAMTPREIS |
---|---|---|
1000 | $3.40875 | $3408.75 |
2000 | $3.19413 | $6388.26 |
Mindestbestellmenge:1000 |