| TYP | BESCHREIBUNG |
|---|---|
| Kategorie | Einzelne FETs, MOSFETs |
| Herst. | EPC |
| Serie | eGaN® |
| Produktstatus | Aktiv |
| Verpackung | Gurt auf Rolle (Tape and Reel - TR) |
| Gehäuse / Hülle | 7-PowerWQFN |
| Montagetyp | Oberflächenmontage |
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 16A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 4mA |
| Lieferantengerätepaket | 7-QFN (3x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1401 pF @ 100 V |
| EIGENSCHAFT | BESCHREIBUNG |
|---|---|
| RoHS-Status | ROHS3 Compliant |
| Feuchteempfindlichkeit (MSL) | |
| REACH-Status | Reach unknown |
| ECCN | |
| HTSUS |
| MENGE | STÜCKPREIS | GESAMTPREIS |
|---|---|---|
| 3000 | $3.2825 | $9847.5 |
| Mindestbestellmenge：3000 | ||
