| TYP | BESCHREIBUNG |
|---|---|
| Kategorie | FETs, MOSFETs |
| Herst. | EPC |
| Serie | eGaN® |
| Produktstatus | Aktiv |
| Verpackung | Gurt auf Rolle (Tape and Reel - TR) |
| Gehäuse / Hülle | Die |
| Montagetyp | Oberflächenmontage |
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 500mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Lieferantengerätepaket | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.45 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 52 pF @ 20 V |
| EIGENSCHAFT | BESCHREIBUNG |
|---|---|
| RoHS-Status | ROHS3 Compliant |
| Feuchteempfindlichkeit (MSL) | 1 (Unlimited) |
| REACH-Status | Reach unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0040 |
| MENGE | STÜCKPREIS | GESAMTPREIS |
|---|---|---|
| 2500 | $1.45076 | $3626.9 |
| 5000 | $1.39622 | $6981.1 |
| Mindestbestellmenge：2500 | ||
