| TYP | BESCHREIBUNG |
|---|---|
| Kategorie | FETs, MOSFETs |
| Herst. | GE Aerospace |
| Serie | SiC Power |
| Produktstatus | Aktiv |
| Verpackung | Lose im Beutel |
| Gehäuse / Hülle | Module |
| Montagetyp | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Betriebstemperatur | -55°C ~ 150°C (Tc) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 2350W |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Current - Continuous Drain (Id) @ 25°C | 765A |
| Input Capacitance (Ciss) (Max) @ Vds | 58000pF @ 900V |
| Rds On (Max) @ Id, Vgs | 2.23mOhm @ 765A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 2414nC @ 18V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.5V @ 160mA |
| Lieferantengerätepaket | Module |
| EIGENSCHAFT | BESCHREIBUNG |
|---|---|
| RoHS-Status | RoHS non-compliant |
| Feuchteempfindlichkeit (MSL) | Not Applicable |
| REACH-Status | Reach affected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
