TYP | BESCHREIBUNG |
---|---|
Kategorie | FETs, MOSFETs |
Herst. | Infineon Technologies |
Serie | - |
Produktstatus | Obsolete |
Verpackung | Tablett |
Gehäuse / Hülle | Module |
Montagetyp | Chassis Mount |
Configuration | 2 N-Channel (Dual) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Technology | Silicon Carbide (SiC) |
Power - Max | - |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 25A |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 800V |
Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 15V |
Gate Charge (Qg) (Max) @ Vgs | 620nC @ 15V |
FET Feature | - |
Vgs(th) (Max) @ Id | 5.5V @ 10mA |
Lieferantengerätepaket | AG-EASY1BM-2 |
EIGENSCHAFT | BESCHREIBUNG |
---|---|
RoHS-Status | unknown |
Feuchteempfindlichkeit (MSL) | Not Applicable |
REACH-Status | Reach unaffected |
ECCN | EAR99 |
HTSUS | 8541.21.0095 |