| TYP | BESCHREIBUNG |
|---|---|
| Kategorie | FETs, MOSFETs |
| Herst. | Renesas Electronics Corporation |
| Serie | - |
| Produktstatus | Obsolete |
| Verpackung | Lose im Beutel |
| Gehäuse / Hülle | 4-XFLGA, CSP |
| Montagetyp | Oberflächenmontage |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.6W (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 1125pF @ 10V |
| Rds On (Max) @ Id, Vgs | 9.8mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Lieferantengerätepaket | 4-WLCSP (1.82x1.82) |
| EIGENSCHAFT | BESCHREIBUNG |
|---|---|
| RoHS-Status | ROHS3 Compliant |
| Feuchteempfindlichkeit (MSL) | 1 (Unlimited) |
| REACH-Status | Reach unknown |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
