TYP | BESCHREIBUNG |
---|---|
Kategorie | FETs, MOSFETs |
Herst. | Taiwan Semiconductor Corporation |
Serie | - |
Produktstatus | Obsolete |
Verpackung | Gurt auf Rolle (Tape and Reel - TR) |
Gehäuse / Hülle | 8-SOIC (0.154", 3.90mm Width) |
Montagetyp | Oberflächenmontage |
Configuration | 2 P-Channel (Dual) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Technology | MOSFET (Metal Oxide) |
Power - Max | 2W |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 10V |
Rds On (Max) @ Id, Vgs | 60mOhm @ 4.7A, 4.5V |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
FET Feature | - |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Lieferantengerätepaket | 8-SOP |
EIGENSCHAFT | BESCHREIBUNG |
---|---|
RoHS-Status | ROHS3 Compliant |
Feuchteempfindlichkeit (MSL) | 3 (168 Hours) |
REACH-Status | Reach unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |