Cambridge GaN Devices

Cambridge GaN Devices

Cambridge GaN Devices (CGD) is a fabless semiconductor company spun out by Prof. Florin Udrea and Dr. Giorgia Longobardi from Cambridge University in 2016 to exploit a revolutionary technology in power devices. Our mission is to shape the future of power electronics by delivering extremely efficient and easy-to-use transistor. CGD designs, develops and commercializes GaN transistors and ICs enabling a radical step change in energy efficiency and compactness and is suitable for high-volume production.
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Cambridge GaN Devices 650V GAN HEMT, 55MOHM, DFN8X8. W 4730 RFQ Tape & Reel (TR) Active Details
Cambridge GaN Devices 650V GAN HEMT, 130MOHM, DFN5X6. 9025 RFQ Tape & Reel (TR) Active Details
Cambridge GaN Devices 650V GAN HEMT, 130MOHM, DFN8X8. 8229 RFQ Tape & Reel (TR) Active Details
Cambridge GaN Devices 650V GAN HEMT, 200MOHM, DFN5X6. 3273 RFQ Tape & Reel (TR) Active Details
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